sot-23 plastic-encapsulate mosfets cj2301 s p-channel 20-v(d-s) mosfet so t -23 fea t ure 1. ga t e t r enchfet power mosfet 2. sour ce 3. drain applica t ions z load switch for port able devices z dc/dc co nv erter marking: s 1 u maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds -20 gate-source voltage v gs 8 v continuous drain current (t j =150 ) i d -2.3 pulsed drain current i dm -10 continuous source-drain diode current i s -0.72 a maximum power dissipation p d 0. 35 w thermal resistance from junction to ambient(t 5s) r ja 357 /w junction temperature t j 150 storage temperature t stg -55 ~ + 150 1 of 3 sales@zpsemi.com www.zpsemi.com cj2301 s b,apr,2011
electrical characteristics (t a =25 unless otherwise noted) para mete r sy mbol te s t conditi o n min ty p max units static drain- s ource b reakdown v oltage v (br) ds s v gs = 0v, i d =-250a -20 v gate- s ource t hreshold v oltage v gs( t h) v ds =v gs , i d = - 250 a -0.4 -1 gate- s ource l eakage i gss v ds =0 v, v gs = 8v 100 na z ero g ate v oltage d rain c urrent i ds s v ds = - 20v, v gs =0 v -1 a drain- s ource o n- s tate r esistance r d s ( on) v gs = - 4.5v, i d = - 2.8a 0.090 0.112 ? v gs = - 2.5v, i d = - 2.0a 0.110 0.142 f o r w a r d t ransconductance a g fs v ds =-5v, i d = - 2.8a 4 .0 s dy na m i c b input c apacitance c iss v ds = - 10v,v gs =0 v,f =1 mhz 405 pf output c apacitance c oss 75 revers e t ransfer c apacitance c rss 55 t otal g ate c harge q g v ds = - 10v,v gs = - 4.5v,i d =-3 a 5.5 10 nc v ds = - 10v,v gs = - 2.5v,i d =-3 a 3.3 6 gate- s ource c harge q gs 0.7 gate- d rain c harge q gd 1.3 gate r esistance r g f =1mhz 6.0 ? t urn- o n d elay t ime t d( on) v dd = - 10v, r l =1 0 ? , i d =-1 a , v gen = - 4.5v,rg= 1 ? 11 20 ns rise t ime t r 35 60 t urn- o ff d elay t ime t d( o f f ) 30 50 fall t ime t f 10 20 drain - so u rce b ody diode characteristics continuous s ource- d rain d iode current i s t c =2 5 -1.3 a pulse d iode f orward c urrent i sm -10 bod y d iode v oltage v sd i s = - 0.7a -0.8 -1.2 v no tes : a.pulse t e st : pulse w i d t h < 300 s, dut y c y cl e 2% . b.guarante ed b y desi gn, not s ubj ect to prod uction testin g. a a 2 of 3 sales@zpsemi.com www.zpsemi.com cj2301 s b,apr,2011
-0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -0 -2 -4 -6 -8 -10 -0 -2 -4 -6 -8 -10 30 60 90 120 150 -0 -2 -4 -6 -8 0 50 100 150 200 250 -0 -1 -2 -3 -4 -0 -2 -4 -6 -8 -10 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1e-3 -0.01 -0.1 -1 -10 transfer characteristics drain current i d (a) gate to source voltage v gs (v) r ds(on) ?? v gs v gs =-4.5v v gs =-2.5v r ds(on) ?? i d on-resistance r ds(on) (m ) drain current i d (a) i d =-2.8a on-resistance r ds(on) (m ) gate to source voltage v gs (v) -3 -0.3 -3e-3 -0.03 t a =25 pulsed t a =25 pulsed t a =25 pulsed t a =25 pulsed t a =25 pulsed output characteristics v gs = -4.5v,-3.5v,-2.5v v gs =-2.0v v gs =-1.5v v gs =-1.0v drain current i d (a) drain to source voltage v ds (v) i s ?? v sd source current i s (a) source to drain voltage v sd (v) 3 of 3 sales@zpsemi.com www.zpsemi.com cj2301 s b,apr,2011
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